Relationship between porous silicon formation and hydrogen incorporation

被引：18

作者：

Allongue, P ^{[1
]}

deVilleneuve, CH ^{[1
]}

Bernard, MC ^{[1
]}

Peou, JE ^{[1
]}

BoutryForveille, A ^{[1
]}

LevyCLement, C ^{[1
]}

机构：

[1] CNRS,UPR 1332,LAB PHYS SOLIDES BELLEVUE,F-92190 MEUDON,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

silicon; hydrogen incorporation;

D O I：

10.1016/S0040-6090(96)09365-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Secondary ion mass spectroscopy was used to study the incorporation of deuterium into Si during the formation of porous silicon in fluoride D2O-based solutions. Results show that the deuterium diffuses from the pore tips towards the bulk silicon and remains in the pore walls in a high concentration. Measurements of the thickness of porous silicon suggest that the penetration of H species is a necessary condition for the porous Si layer to form. A simple model illustrates how the initiation of pores occurs by selective dissolution of H-induced structural defects. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 4

页数：4

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