Photoluminescence of CdTe/CdMnTe multiple quantum wells excited near the Mott transition

被引:24
作者
Cain, N
ONeill, M
Nicholls, JE
Stirner, T
Hagston, WE
Ashenford, DE
机构
[1] UNIV HULL,DEPT PHYS,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND
[2] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND
基金
英国工程与自然科学研究理事会;
关键词
II-VI semiconductors; photoluminescence; Mott transition; biexcitons; quantum wells;
D O I
10.1016/S0022-2313(97)00135-X
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using pulses from a 6 ns dye laser, the photoluminescence from CdTe/CdMnTe quantum wells is investigated as a function of carrier density. The spectra broaden with density but many sharp features remain. A biexciton is identified with a transition energy of 3.8 meV less than that of the free exciton. The Mott transition for the el-hl bandedge is approached at an excitation density of 2.2 x 10(12) cm(-2). Photoluminescence from the e1-h3 exciton is observed as a sharp peak at high densities. Its transition energy does not change and its intensity increases linearly with carrier density.
引用
收藏
页码:269 / 275
页数:7
相关论文
共 16 条
[1]   MANY-BODY EFFECTS IN TRANSIENT LUMINESCENCE SPECTRA OF A HOMOGENEOUS ELECTRON-HOLE PLASMA IN CDTE/CDMNTE QUANTUM-WELLS [J].
BACHER, G ;
DAIMINGER, F ;
FORCHEL, A ;
WAAG, A ;
LITZ, T ;
LANDWEHR, G .
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :856-860
[2]   Binding of quasi-two-dimensional biexcitons [J].
Birkedal, D ;
Singh, J ;
Lyssenko, VG ;
Erland, J ;
Hvam, JM .
PHYSICAL REVIEW LETTERS, 1996, 76 (04) :672-675
[3]  
CAIN N, 1996, THESIS U HULL
[4]   LINE-SHAPES OF INTERSUBBAND AND EXCITONIC RECOMBINATION IN QUANTUM-WELLS - INFLUENCE OF FINAL-STATE INTERACTION, STATISTICAL BROADENING, AND MOMENTUM CONSERVATION [J].
CHRISTEN, J ;
BIMBERG, D .
PHYSICAL REVIEW B, 1990, 42 (11) :7213-7219
[5]   FREQUENCY AND DENSITY DEPENDENT RADIATIVE RECOMBINATION PROCESSES IN III-V SEMICONDUCTOR QUANTUM-WELLS AND SUPERLATTICES [J].
CINGOLANI, R ;
PLOOG, K .
ADVANCES IN PHYSICS, 1991, 40 (05) :535-623
[6]   BAND-GAP RENORMALIZATION IN SEMICONDUCTOR QUANTUM-WELLS [J].
DASSARMA, S ;
JALABERT, R ;
YANG, SRE .
PHYSICAL REVIEW B, 1990, 41 (12) :8288-8294
[7]   MAGNETOOPTICAL STUDY OF EXCITONIC BINDING-ENERGIES, BAND OFFSETS, AND THE ROLE OF INTERFACE POTENTIALS IN CDTE/CD1-XMNXTE MULTIPLE-QUANTUM WELLS [J].
JACKSON, SR ;
NICHOLLS, JE ;
HAGSTON, WE ;
HARRISON, P ;
STIRNER, T ;
HOGG, JHC ;
LUNN, B ;
ASHENFORD, DE .
PHYSICAL REVIEW B, 1994, 50 (08) :5392-5403
[8]   ROOM-TEMPERATURE EMISSION OF HIGHLY EXCITED GAAS/GA1-XALXAS QUANTUM-WELLS [J].
LACH, E ;
FORCHEL, A ;
BROIDO, DA ;
REINECKE, TL ;
WEIMANN, G ;
SCHLAPP, W .
PHYSICAL REVIEW B, 1990, 42 (08) :5395-5398
[9]   DIMENSIONALITY OF EXCITON-STATE RENORMALIZATION IN HIGHLY EXCITED SEMICONDUCTORS [J].
NOJIMA, S .
PHYSICAL REVIEW B, 1995, 51 (16) :11124-11127
[10]   RELATIVE IMPORTANCE OF SELF-CONSISTENCY AND VARIABLE SYMMETRY IN THE CALCULATION OF EXCITON ENERGIES IN TYPE-I AND TYPE-II SEMICONDUCTOR HETEROSTRUCTURES [J].
PIOREK, T ;
HARRISON, P ;
HAGSTON, WE .
PHYSICAL REVIEW B, 1995, 52 (19) :14111-14117