Hall coefficient of the 2D electron system in silicon MOSFETs

被引:7
作者
Sarachik, MP [1 ]
Simonian, D
Mertes, KM
Kravchenko, SV
Klapwijk, TM
机构
[1] CUNY City Coll, Dept Phys, New York, NY 10031 USA
[2] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
来源
PHYSICA B | 2000年 / 280卷 / 1-4期
关键词
dilute two-dimensional systems; Hall coefficient; silicon MOSFETs;
D O I
10.1016/S0921-4526(99)01698-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Hall coefficient measurements are reported for the two-dimensional electron system in silicon MOSFETs for densities throughout the metallic phase and very near the transition to insulating behavior. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:301 / 302
页数:2
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