High frequency interconnects on silicon substrates

被引：15

作者：

Ponchak, GE

Downey, AN

Katehi, LPB

机构：

来源：

1997 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM: DIGEST OF TECHNICAL PAPERS | 1997年

关键词：

D O I：

10.1109/RFIC.1997.598751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measured propagation constant of coplanar waveguide (CPW) on silicon wafers as a function of the line dimensions and the resistivity of the Si wafer; CPW on GaAs wafers as a function of the line dimensions; and thin film microstrip (TFMS) fabricated with polyimide on the surface of a silicon wafer is presented. It is shown that the attenuation of CPW on 2500 Ohm-cm Si wafers and of TFMS with a polyimide thickness of 4 mu m or greater is comparable to the attenuation of similar lines on GaAs.

引用

页码：101 / 104

页数：4