Noise characteristics of nonlinear semiconductor optical amplifiers in the Gaussian limit

被引:44
作者
Shtaif, M
Eisenstein, G
机构
[1] Electrical Engineering Department, Technion-Israel Inst. of Technology
[2] Technion-Israel Inst. of Technology, Haifa
关键词
D O I
10.1109/3.538787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper addresses noise properties of nonlinear semiconductor optical amplifiers, From a basic point of view, noise properties of nonlinear optical amplifiers are sufficiently different from those of linear amplifiers to warrant detailed modeling which has not been formulated previously, From a practical point of view, nonlinear semiconductor optical amplifiers are important for future all-optical signal-processing applications which may involve the operation of these devices in a saturated regime, Nonlinear amplifiers are also common in systems operating near 1300 nm and in integrated booster amplifiers. Under nonlinear operating conditions, amplifier noise contains a narrow-band contribution that comes about due to the nonlinear coupling of noise and gain, The more conventional broadband spontaneous noise also changes as the inversion factor becomes power-dependent and varies along the amplifier axis, We analyze noise in nonlinear amplifiers in the Gaussian limit (meaning, for fields consisting of large photon numbers) for CW or NRZ modulated signals and separately for short pulses, We consider the case of a single input as well as configurations of multi-input signals interacting via four-wave mixing, Using a specific detection system for the calculations of electronic Signal-to-noise ratios, we demonstrate a reduction in the narrow-band electronic noise due to saturation in the single input case, We also demonstrate a vast advantage of using short pulses in four-wave-mixing applications.
引用
收藏
页码:1801 / 1809
页数:9
相关论文
共 25 条
[1]   SELF-PHASE MODULATION AND SPECTRAL BROADENING OF OPTICAL PULSES IN SEMICONDUCTOR-LASER AMPLIFIERS [J].
AGRAWAL, GP ;
OLSSON, NA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (11) :2297-2306
[3]  
BENDJABALLAH C, 1980, PHYS REV A, V22, P2726, DOI 10.1103/PhysRevA.22.2726
[4]   ANOMALOUS INTERACTION OF SPECTRAL MODES IN A SEMICONDUCTOR LASER [J].
BOGATOV, AP ;
ELISEEV, PG ;
SVERDLOV, BN .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :510-515
[5]   NONLINEAR-INTERACTIONS IN OPTICAL AMPLIFIERS FOR MULTIFREQUENCY LIGHTWAVE SYSTEMS [J].
DARCIE, TE ;
JOPSON, RM .
ELECTRONICS LETTERS, 1988, 24 (10) :638-640
[6]  
DESURVIRE E, 1994, ERBIUM DOPED FIBER A
[7]   EFFICIENCY AND NOISE PERFORMANCE OF WAVELENGTH CONVERTERS BASED ON FWM IN SEMICONDUCTOR OPTICAL AMPLIFIERS [J].
DOTTAVI, A ;
IANNONE, E ;
MECOZZI, A ;
SCOTTI, S ;
SPANO, P ;
DALLARA, R ;
ECKNER, J ;
GUEKOS, G .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :357-359
[8]   4 GB/S OPTICAL WAVELENGTH CONVERSION USING SEMICONDUCTOR OPTICAL AMPLIFIERS [J].
JOERGENSEN, C ;
DURHUUS, T ;
BRAAGAARD, C ;
MIKKELSEN, B ;
STUBKJAER, KE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :657-660
[9]   ANALYSIS OF ORIGIN OF NONLINEAR GAIN IN 1.5 MU-M SEMICONDUCTOR ACTIVE LAYERS BY HIGHLY NONDEGENERATE 4-WAVE-MIXING [J].
KIKUCHI, K ;
AMANO, M ;
ZAH, CE ;
LEE, TP .
APPLIED PHYSICS LETTERS, 1994, 64 (05) :548-550
[10]   WAVELENGTH DIVISION MULTIPLEXING LIGHT-SOURCE WITH INTEGRATED QUANTUM WELL TUNABLE LASERS AND OPTICAL AMPLIFIERS [J].
KOREN, U ;
KOCH, TL ;
MILLER, BI ;
EISENSTEIN, G ;
BOSWORTH, RH .
APPLIED PHYSICS LETTERS, 1989, 54 (21) :2056-2058