Fully coupled dynamic electro-thermal simulation

被引:49
作者
Digele, G [1 ]
Lindenkreuz, S [1 ]
Kasper, E [1 ]
机构
[1] UNIV STUTTGART,INST SEMICOND ENGN,D-70174 STUTTGART,GERMANY
关键词
D O I
10.1109/92.609867
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented, Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation, The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermmal simulations we are able to use the common electrical compact models by adding a heatsource and thermal pins to them, The application of this technique and need for electro-thermmal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.
引用
收藏
页码:250 / 257
页数:8
相关论文
共 32 条
[1]  
ADLER MS, 1979, P NASECODE I C, P3
[2]  
*AN INC, 1990, MAST REF MAN
[3]  
*AN INC, 1990, SABER MAN
[4]   3-DIMENSIONAL TRANSIENT THERMAL SIMULATION - APPLICATION TO DELAYED SHORT-CIRCUIT PROTECTION IN POWER ICS [J].
ANTOGNETTI, P ;
BISIO, GR ;
CURATELLI, F ;
PALARA, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :277-281
[5]   DYNAMIC SPICE-SIMULATION OF THE ELECTROTHERMAL BEHAVIOR OF SOI MOSFETS [J].
BIELEFELD, J ;
PELZ, G ;
ABEL, HB ;
ZIMMER, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) :1968-1974
[6]   ON THE APPLICATION OF THE KIRCHHOFF TRANSFORMATION TO THE STEADY-STATE THERMAL-ANALYSIS OF SEMICONDUCTOR-DEVICES WITH TEMPERATURE-DEPENDENT AND PIECEWISE INHOMOGENEOUS THERMAL-CONDUCTIVITY [J].
BONANI, F ;
GHIONE, G .
SOLID-STATE ELECTRONICS, 1995, 38 (07) :1409-1412
[7]   INTEGRATED CIRCUIT THERMAL MODELING [J].
CASTELLO, R ;
ANTOGNETTI, P .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) :363-366
[8]   CHARACTERIZATION OF THE THERMAL-BEHAVIOR IN ICS [J].
CURATELLI, F ;
BISIO, GM .
SOLID-STATE ELECTRONICS, 1991, 34 (07) :751-760
[9]  
DIGELE G, 1996, P IEEE THERM INT WOR, P73
[10]   Lithography-independent nanometer silicon MOSFET's on insulator [J].
Dudek, V ;
Appel, W ;
Beer, L ;
Digele, G ;
Hofflinger, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1626-1632