Unconventional metallic state in a two-dimensional system with broken inversion symmetry

被引:98
作者
Pudalov, VM
机构
[1] Institute of High-Pressure Physics
关键词
D O I
10.1134/1.567498
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (1) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (2) the occurrence of a metal-insulator transition in the 2D electron system. Both effects are ascribed to the spin-orbit interaction anomalously enhanced by the broken inversion symmetry of the confining potential well. (C) 1997 American Institute of Physics.
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页码:175 / 181
页数:7
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