Origin of the blue photoluminescence from SiO2(SiC)/SiC on Si substrate

被引：12

作者：

Chen, Zheng ^{[1
]}

Wang, Yuxia ^{[1
]}

Zou, Youming ^{[1
]}

Wang, Jianwen ^{[1
]}

Li, Yun ^{[1
]}

Zhang, Hongjuan ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2360231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiC film is prepared by heating the polystyrene/Si in 1 atm ambient Ar at 1270 degrees C. The as-grown SiC film is characterized by scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Based on the results, it is suggested that a SiO2(SiC) layer is located on the top of the as-grown SiC film. A blue photoluminescence band is observed from the as-grown sample. The photoluminescence band has the same origin as those from silica nanowires and SiC nanostructures and is associated with the near interface traps at the interface of SiO2/SiC or SiO2/Si. (c) 2006 American Institute of Physics.

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页数：3

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