Growth dynamics of pentacene thin films: Real-time synchrotron x-ray scattering study

被引:53
作者
Mayer, Alex C.
Ruiz, Ricardo
Zhou, Hua
Headrick, Randall L.
Kazimirov, Alexander
Malliaras, George G. [1 ]
机构
[1] Cornell Univ, Ithaca, NY 14853 USA
[2] Univ Vermont, Dept Phys, Burlington, VT 05405 USA
[3] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
关键词
D O I
10.1103/PhysRevB.73.205307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Real-time synchrotron x-ray scattering in the anti-Bragg configuration was used to monitor the dynamics of pentacene film growth on inert substrates. A distributed-growth model, according to which pentacene molecules adsorbed on the nth layer can either nucleate and contribute to the growth of the (n+1)th layer or transfer downward and contribute to the growth of the nth layer, gave a good description of the data. For molecules adsorbed on the first and second layers, the probability of downward transfer was found to be dependent on the substrate, and independent of temperature within the range from 25 to 60 degrees C. For films grown on SiO2, an Ehrlich-Schwoebel barrier of the order of 70 meV dominated downward transfer of pentacene molecules in layers away from the substrate. For films grown on an alkylated self-assembled monolayer, significant desorption of pentacene molecules from the substrate at elevated temperatures forced the growth mode toward the three-dimensional limit.
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页数:5
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共 26 条
[1]   BIRTH DEATH MODELS OF EPITAXY .1. DIFFRACTION OSCILLATIONS FROM LOW INDEX SURFACES [J].
COHEN, PI ;
PETRICH, GS ;
PUKITE, PR ;
WHALEY, GJ ;
ARROTT, AS .
SURFACE SCIENCE, 1989, 216 (1-2) :222-248
[2]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[3]  
2-9
[4]   Molecular beam deposited thin films of pentacene for organic field effect transistor applications [J].
Dimitrakopoulos, CD ;
Brown, AR ;
Pomp, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2501-2508
[5]   ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].
EHRLICH, G ;
HUDDA, FG .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&
[6]  
Headrick RL, 2004, AIP CONF PROC, V705, P1150, DOI 10.1063/1.1758003
[7]   Growth dynamics of pentacene thin films [J].
Heringdorf, FJMZ ;
Reuter, MC ;
Tromp, RM .
NATURE, 2001, 412 (6846) :517-520
[8]  
Kasap S.O., 2002, Principles of Electronic Materials and Devices
[9]   Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].
Knipp, D ;
Street, RA ;
Völkel, A ;
Ho, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355
[10]   Temperature dependence of the 2D-3D transition in the growth of PTCDA on Ag(111): A real-time X-ray and kinetic Monte Carlo study [J].
Krause, B ;
Schreiber, F ;
Dosch, H ;
Pimpinelli, A ;
Seeck, OH .
EUROPHYSICS LETTERS, 2004, 65 (03) :372-378