Microscopic electronic phase separation and metal-insulator transition in Nd0.5Sr0.5MnO3

被引:43
作者
Fukumoto, N
Mori, S [1 ]
Yamamoto, N
Moritomo, Y
Katsufuji, T
Chen, CH
Cheong, SW
机构
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
[2] Nagoya Univ, Ctr Integrated Res Sci & Engn, Nagoya, Aichi 4648501, Japan
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 18期
关键词
D O I
10.1103/PhysRevB.60.12963
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microstructure related to the charge ordered (CO) state and metal-insulator (MI) transition in Nd0.5Sr0.5MnO3 was investigated by transmission electron microscopy. An in situ observation on heating from the CO state revealed a drastic change in the microstructure: the nucleation and growth of the ferromagnetic (FM) charge disordered regions proceed in the vicinity of the antiphase boundaries in the CO regions, which are closely related to the MI transition around 160 K. These transition processes suggest that an abrupt increase in the electronic conductivity during the MI transition is mainly due to the percolation mechanism. Further more, the FM metallic phase is found to be characterized by a spatially fine mixture of incommensurate charge ordered microdomains in the FM charge disordered phase. This result clearly demonstrates the occurrence of microscopic-scale electronic phase separation in the manganese oxides. [S0163-1829(99)02541-2].
引用
收藏
页码:12963 / 12967
页数:5
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