Room-temperature magnetoresistive sensor based on thick films manganese perovskite

被引：7

作者：

Balcells, L

Cifre, J

Calleja, A

Fontcuberta, J

Varela, M

Benítez, F

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Catalonia, Spain

[2] Univ Barcelona, Fac Fis, Dept Fis Aplicada & Opt, E-08028 Barcelona, Catalonia, Spain

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 81卷 / 1-3期

关键词：

room-temperature; thick films; manganese perovskite;

D O I：

10.1016/S0924-4247(99)00118-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

La2/3Sr1/3MnO3 perovskite, having the ferromagnetic transition above room-temperature, is a good candidate to be used as a magnetoresistive sensor. The fabrication of La2/3Sr1/3MnO3 thick films on Al2O3 and ZrO2 substrates, by screen printing technique, is reported. The synthesis conditions to optimize the room-temperature magnetoresistive response and mechanical durability have been explored. It is shown that under appropriate conditions, materials having field sensitivity high enough for some applications at room-temperature can be obtained. A magnetoresistive device has been developed in order to show the potentiality of this material as a low-cost magnetic sensor. (C) 2000 Elsevier Science S.A. All rights reserved.

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收藏

页码：64 / 66

页数：3

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