Room-temperature magnetoresistive sensor based on thick films manganese perovskite

被引:7
作者
Balcells, L
Cifre, J
Calleja, A
Fontcuberta, J
Varela, M
Benítez, F
机构
[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Catalonia, Spain
[2] Univ Barcelona, Fac Fis, Dept Fis Aplicada & Opt, E-08028 Barcelona, Catalonia, Spain
关键词
room-temperature; thick films; manganese perovskite;
D O I
10.1016/S0924-4247(99)00118-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
La2/3Sr1/3MnO3 perovskite, having the ferromagnetic transition above room-temperature, is a good candidate to be used as a magnetoresistive sensor. The fabrication of La2/3Sr1/3MnO3 thick films on Al2O3 and ZrO2 substrates, by screen printing technique, is reported. The synthesis conditions to optimize the room-temperature magnetoresistive response and mechanical durability have been explored. It is shown that under appropriate conditions, materials having field sensitivity high enough for some applications at room-temperature can be obtained. A magnetoresistive device has been developed in order to show the potentiality of this material as a low-cost magnetic sensor. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:64 / 66
页数:3
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