The energy gap E-g of Zn1-xMgxSySe1-y epitaxial layers as a function of composition and temperature

被引：31

作者：

Lunz, U

Schumacher, C

Nurnberger, J

Schull, K

Gerhard, A

Schussler, U

Jobst, B

Faschinger, W

Landwehr, G

机构：

[1] UNIV WURZBURG,INST MINERAL,D-97074 WURZBURG,GERMANY

[2] UNIV BREMEN,INST FESTKORPERPHYS,D-28359 BREMEN,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 08期

关键词：

D O I：

10.1088/0268-1242/12/8/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The energy gap E-g of zinc-blende Zn1-xMgxSySe1-y epitaxial layers grown by molecular beam epitaxy has been determined over a wide range of composition using optical transmission and reflection and an empirical formula for the energy gap at room temperature is also given. In addition in situ spectroscopic ellipsometry was used in order to determine the temperature dependence of the energy gap E-g between room temperature and the growth temperature of alloys with compositions x, y as used in cladding layers and waveguides for blue-green light-emitting devices.

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页码：970 / 973

页数：4

相关论文

共 13 条

[1] VARIATION WITH COMPOSITION OF E0 AND E0+ DELTA-0 GAPS IN ZNSX SE1-X ALLOYS [J].

EBINA, A ;

FUKUNAGA, E ;

TAKAHASHI, T .

PHYSICAL REVIEW B, 1974, 10 (06) :2495-2500

[2] Characterization of Zn-(1-y)MgySxSe(1-x) epilayers grown by low-pressure metalorganic vapour phase epitaxy [J].

Hamadeh, H ;

Sollner, J ;

Schmoranzer, J ;

Heuken, M .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :89-96

[3] CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters [J].

Hartmann, JM ;

Cibert, J ;

Kany, F ;

Mariette, H ;

Charleux, M ;

Alleysson, P ;

Langer, R ;

Feuillet, G .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) :6257-6265

[4] E(0) band-gap energy and lattice constant of ternary Zn1-xMgxSe as functions of composition [J].

Jobst, B ;

Hommel, D ;

Lunz, U ;

Gerhard, T ;

Landwehr, G .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :97-99

[5] Epitaxy of Zn1-xMgxSeyTe1-y on (100)InAs [J].

Litz, MT ;

Watanabe, K ;

Korn, M ;

Ress, H ;

Lunz, U ;

Ossau, W ;

Waag, A ;

Landwehr, G ;

Walter, T ;

Neubauer, B ;

Gerthsen, D ;

Schussler, U .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :54-57

[6] Temperature dependence of the energy gap of zinc-blende CdSe and Cd(1-x)Zn(x)e epitaxial layers [J].

Lunz, U ;

Kuhn, J ;

Goschenhofer, F ;

Schussler, U ;

Einfeldt, S ;

Becker, CR ;

Landwehr, G .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) :6861-6863

[7] OPTICAL-PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREEN LASER APPLICATIONS [J].

LUNZ, U ;

JOBST, B ;

EINFELDT, S ;

BECKER, CR ;

HOMMEL, D ;

LANDWEHR, G .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5377-5380

[8] The band gap of Hg1-xMgxTe grown by molecular beam epitaxy [J].

Oehling, S ;

Lunz, U ;

Heinke, H ;

Plahl, G ;

Becker, CR ;

Landwehr, G .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :1157-1160

[9] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623

[10] OPTICAL-CONSTANTS OF ZNSXSE1-X TERNARY ALLOYS [J].

OZAKI, S ;

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7470-7475