Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions

被引：35

作者：

Sun, J. M.

Prucnal, S.

Skorupa, W.

Helm, M.

Rebohle, L.

Gebel, T.

机构：

[1] Forschungszentrum Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Nanoparc GmbH, D-01454 Radeberg OT Rossendorf, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

关键词：

D O I：

10.1063/1.2338892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Efficient blue electroluminescence peak at around 440 nm with a maximum output power density of 34 mW/cm(2) was obtained from Ce and Gd coimplanted metal-oxide-semiconductor light emitting devices. Energy transfer from Gd3+ to Ce3+ ions was observed during the excitation process, leading to a more than threefold increase of the external quantum efficiency of the blue Ce3+ luminescence up to 1.8%. This is evidenced by the increase of the excitation cross section of Ce3+ ions from 4.8x10(-13) to 3.5x10(-12) cm(2) and the simultaneous reduction of the decay time and the impact cross section of Gd3+ ions. (c) 2006 American Institute of Physics.

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页数：3

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