Organic single-crystal field-effect transistors

被引:504
作者
de Boer, RWI
Gershenson, ME
Morpurgo, AF
Podzorov, V
机构
[1] Delft Univ Technol, Fac Sci Appl, Dept Nanosci, NL-2628 CJ Delft, Netherlands
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 06期
基金
美国国家科学基金会;
关键词
D O I
10.1002/pssa.200404336
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of mu as high as 15 cm(2)/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the intrinsic electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1302 / 1331
页数:30
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