Cooperative polymer gate dielectrics in organic thin-film transistors

被引：80

作者：

Park, SY ^{[1
]}

Park, M ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.1794857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A concept is introduced in which two polymer dielectrics are made cooperative in acting as the gate insulator for organic thin-film transistors. The bilayer insulator consists of a thin polymer dielectric in contact with the active layer that can induce good electrical properties and a much thicker dielectric with good dielectric properties. These dielectrics are cooperative in combining the best each can offer for a high mobility and a negligible hysteresis. (C) 2004 American Institute of Physics.

引用

页码：2283 / 2285

页数：3

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