Manufacturing with DUV lithography

被引:26
作者
Holmes, SJ
Mitchell, PH
Hakey, MC
机构
关键词
D O I
10.1147/rd.411.0007
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Deep-UV (DUV) lithography has been developed to scale minimum feature sizes of devices on semiconductor chips to sub-half-micron dimensions. This paper reviews early manufacturing experiences at the IBM Microelectronics Division with deep ultraviolet (DUV) lithography at a 248-nm wavelength. Critical steps in the processing of 1Mb DRAM, 16Mb DRAM, and logic gate conductors in devices are discussed. The evolution of DUV lithography tools is also briefly reviewed.
引用
收藏
页码:7 / 19
页数:13
相关论文
共 27 条
[1]  
BRUNSVOLD W, 1994, P SOC PHOTO-OPT INS, V2195, P329, DOI 10.1117/12.175350
[2]  
BUCKLEY JD, 1982, SOLID STATE TECHNOL, V25, P77
[3]   OVERVIEW OF GATE LINEWIDTH CONTROL IN THE MANUFACTURE OF CMOS LOGIC CHIPS [J].
CHESEBRO, DG ;
ADKISSON, JW ;
CLARK, LR ;
ESLINGER, SN ;
FAUCHER, MA ;
HOLMES, SJ ;
MALLETTE, RP ;
NOWAK, EJ ;
SENGLE, EW ;
VOLDMAN, SH ;
WEEKS, TW .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (1-2) :189-200
[4]  
CONLEY W, 1993, P SOC PHOTO-OPT INS, V1925, P11
[5]   ADVANCED 1X-PROJECTION PHOTOLITHOGRAPHY [J].
HAKEY, M ;
STRAUB, W .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :813-830
[6]  
HIBBS M, 1995, SOLID STATE TECHNOL, V38, P69
[7]  
Holmes S., 1990, Proceedings of the SPIE - The International Society for Optical Engineering, V1264, P61, DOI 10.1117/12.20180
[8]  
HOLMES S, 1992, P SOC PHOTO-OPT INS, V1671, P57, DOI 10.1117/12.136040
[9]  
HOLMES S, 1993, P SEM KANS KYOT 93 T, P85
[10]  
HOLMES S, 1994, P 10 INT C PHOT MIDH, P396