Deuterium channeling analysis for He+-implanted 6H-SiC

被引：30

作者：

Jiang, W

Thevuthasan, S

Weber, WJ

Grötzschel, R

机构：

[1] Pacific NW Lab, Richland, WA 99352 USA

[2] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

RBS and NRA/channeling; ion-beam-induced damage; damage recovery; 6H-SiC;

D O I：

10.1016/S0168-583X(99)00692-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both sublattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 x 10(16) He+/cm(2), more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 x 10(16) He+/cm(2)), exhibits an epitaxial growth rate of similar to 0.154 nm/K in the temperature range 370-870 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：501 / 504

页数：4

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