Electrical properties of Schottky diodes on nano-porous TiO2 films

被引：26

作者：

Könenkamp, R ^{[1
]}

Rieck, I ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

nano-crystalline; nano-porous; large area hetero-junction; TiO2;

D O I：

10.1016/S0921-5107(99)00249-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electrical transport properties of nano-porous TiO2 films in laboratory air and dry nitrogen ambients. For the Pt/TiO2 Schottky barrier we find a barrier height of 1.7 eV, compatible with an electron affinity of 3.9 eV for the TiO2 films. Below similar to 300 K, tunneling transport through the barrier occurs, resulting in strong barrier lowering. The barrier lowering becomes more severe with increasing humidity, indicating that water adsorption induces a large surface state density. Time-resolved photoconductance decay measurements show that water adsorption also leads to a reduction of the electron drift mobility and the photoconductance. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：519 / 521

页数：3

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