Doping-induced change of carrier mobilities in poly(3-hexylthiophene) films with different stacking structures

被引：74

作者：

Jiang, X

Harima, Y

Yamashita, K

Tada, Y

Ohshita, J

Kunai, A

机构：

[1] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 364卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(02)01383-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mobilities of positive charge carriers in poly(3-hexylthiophene) (PHT) films of 54%, 70%, 81%, and 97% in regio-regularity were electrochemically measured over a range of doping levels. The results show that better ordered stacking structures enhance mobilities, but affect little features of the mobility change by doping. The common doping level of ca. 1% for the onset of the drastic mobility increase implies that the pi-pi stacking structures facilitating a charge transport in neutral or lightly doped PHT films are not responsible for the evolution of metallic conduction in PHT films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：616 / 620

页数：5

共 21 条

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