Electromigration failure mechanism studies on copper interconnects

被引：42

作者：

Fischer, AH ^{[1
]}

von Glasow, A ^{[1
]}

Penka, S ^{[1
]}

Ungar, F ^{[1
]}

机构：

[1] Infineon Technol AG, Reliabil Methodol, D-81739 Munich, Germany

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electromigration (EM) studies revealed a strong correlation between observed failure scenario and local microstructural properties at the via-to-line-transition, in particular that of the liner. "Early" failure modes were found to have not only smaller failure times but also a lower current density exponent. The influence of specific processes on the occurrence of certain failure modes will be discussed.

引用

页码：139 / 141

页数：3

共 4 条

[1] Fischer A. H., 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), P359, DOI 10.1109/RELPHY.2000.843940
[2] HU CK, 1998, MATER CHEM PHYS, P52
[3] Electromigration in integrated circuit conductors
Lloyd, JR
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (17) : R109 - R118
[4] Statistics of electromigration early failures in Cu/oxide dual-damascene interconnects
Ogawa, ET
Lee, KD
Matsuhashi, H
Ko, KS
Justison, PR
Ramamurthi, AN
Bierwag, AJ
Ho, PS
Blaschke, VA
Havemann, RH
[J]. 39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, : 341 - 349

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