Scintillation detection using a silicon drift chamber with on-chip electronics

被引:22
作者
Fiorini, C [1 ]
Perotti, F [1 ]
机构
[1] CNR,IST FIS COSM & TECNOL RELAT,I-20133 MILAN,ITALY
关键词
scintillation detectors; gamma-ray spectroscopy; silicon photodetectors; silicon drift chamber;
D O I
10.1016/S0168-9002(97)00915-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The performances of a Silicon Drift Chamber (SDC), having a diameter of 3 mm, as scintillation light photodetector have been experimentally evaluated on a prototype of hard X-ray spectrometer employing a Csl(Tl) crystal of the same diameter and 5 mm thick, The SDC, with on-chip electronics, is characterized by an electronics noise considerably lower than that exhibited by a conventional photodiode of equal area and thickness. Consequently, the present hard X-ray detector may operate on a wide energy range, with a minimum energy threshold of about 10 keV at room temperature or lower than 5 keV below 10 degrees C. The measured, energy resolution at room temperature is 7.49% FWHM at 122 keV and 4.34% FWHM at 662 keV, The same SDC photodetector has been also used together with a Csl(TI) crystal having a thickness of 10 mm and, consequently, a useful energy range extending up to soft gamma-ray energies. While at room temperature the energy resolutions of the two detector configurations are substantially Identical, below 10 degrees C the configuration using the smaller crystal shows appreciably better performances.
引用
收藏
页码:104 / 112
页数:9
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