Doping effects on the piezoelectric properties of low-temperature sintered PNN-PZT-based ceramics

被引:18
作者
Chu, SY [1 ]
Hsieh, CS [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan, Taiwan
关键词
D O I
10.1023/A:1006746715913
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of BiFeO3 and Ba(Cu0.5W0.5)O3 additions on the sintering temperature and the dielectric properties of PNN-PZT ceramics were investigated for the suppression of PbO volatilization. The sintering temperature was 300 to 350°C lower than that of conventional piezolectric ceramics, but the good dielectric properties were maintained.
引用
收藏
页码:609 / 612
页数:4
相关论文
共 16 条
[1]   POINT DEFECTS AND SINTERING OF LEAD ZIRCONATE-TITANATE [J].
ATKIN, RB ;
FULRATH, RM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1971, 54 (05) :265-&
[2]   SUBSTITUTION OF BI AND NB IONS IN LEAD ZIRCONATE-TITANATE [J].
ATKIN, RB ;
HOLMAN, RL ;
FULRATH, RM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1971, 54 (02) :113-&
[3]   LOW-TEMPERATURE SINTERING OF PZT CERAMICS [J].
CHENG, SY ;
FU, SL ;
WEI, CC .
CERAMICS INTERNATIONAL, 1987, 13 (04) :223-231
[4]  
CHENG SY, 1986, J MATER SCI, V21, P572
[5]  
CHIANG SS, 1981, AM CERAM SOC BULL, V60, P484
[6]  
Dong D., 1993, FERROELECTRICS, V145, P125
[7]   LOW-TEMPERATURE SINTERING OF LEAD-BASED PIEZOELECTRIC CERAMICS [J].
GUI, ZL ;
GAO, SH ;
ZHANG, XW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (03) :486-491
[8]  
GUI ZL, 1990, FERROELECTRICS, V101, P93, DOI 10.1080/00150199008016505
[9]   HIGH VOLUME EFFICIENCY MULTILAYER CERAMIC CAPACITOR [J].
HANDA, K ;
WATANABE, T ;
YAMASHITA, Y ;
HARATA, M .
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1984, 30 (03) :342-347
[10]  
IKEDA T, 1963, JPN J APPL PHYS, V2, P63