Low-field colossal magnetoresistance in bandwidth-controlled manganites

被引:19
作者
Kuwahara, H [1 ]
Moritomo, Y [1 ]
Tomioka, Y [1 ]
Asamitsu, A [1 ]
Kasai, M [1 ]
Tokura, Y [1 ]
机构
[1] UNIV TOKYO,DEPT APPL PHYS,TOKYO 113,JAPAN
关键词
D O I
10.1063/1.364707
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated magnetoresistance (MR) phenomena relevant to the charge ordering (CO), namely, the real space ordering of both Mn3+ and Mn4+, in single crystals of (Nd1-ySmy)(1/2)Sr1/2MnO3, in which the one-electron bandwidth (W) is systematically controlled by varying the average ionic radius of the A site. The low-field colossal MR is observed for the small-W region of y greater than or equal to 0.5; e.g., rho(0)/rho(H) > 10(3) in a field of 0.3 T at 115 K for the y = 0.94 crystal. This is viewed as a first-order insulator-to-metal phase transition induced by a magnetic field, which accompanies a lattice-structural change. In the small-W region, the CO instability accompanying the antiferromagnetic spin correlations subsists even above the ferromagnetic transition temperature T-c. The competition between the ferromagnetic double-exchange and antiferromagnetic CO interactions gives rise to such a lattice-coupled first-order phase transition induced by a relatively low magnetic field. (C) 1997 American Institute of Physics.
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页码:4954 / 4956
页数:3
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