Band anticrossing in GaP1-xNx alloys -: art. no. 241303

被引：65

作者：

Wu, J ^{[1
]}

Walukiewicz, W

Yu, KM

Ager, JW

Haller, EE

Hong, YG

Xin, HP

Tu, CW

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.65.241303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of GaP1-xNx alloys (0.7%less than or equal toxless than or equal to2.3%) grown by gas-source molecular-beam epitaxy have been studied using photoluminescence spectroscopy under hydrostatic pressures up to 133 kbar at 30 K. The peak energy of the band-edge photoluminescence spectrum shows an unusual, nonmonotonic dependence on the hydrostatic pressure. The anomalous results are explained in terms of an anticrossing interaction of localized nitrogen states with the Gamma band edge at low pressures and with the X band edge at large hydrostatic pressures.

引用

页码：2413031 / 2413034

页数：4

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