Fundamental absorption edge spectrum of ultrathin a-Si:H film in a-Si:H/a-Si3N4:H multilayer obtained from luminescence excitation spectrum

被引：13

作者：

Murayama, K ^{[1
]}

Toyama, T ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHIHIROSHIMA 739,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 02期

关键词：

disordered system; quantum well; semiconductors; optical properties; luminescence;

D O I：

10.1016/S0038-1098(97)00253-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The fundamental absorption edge spectra of ultrathin hydrogenated amorphous silicon (a-Si : H) films with thicknesses of 400, 50, 25, 13 and 5 A in the a-Si : H/hydrogenated amorphous silicon nitride (a-Si3N4 : H) multilayers have been determined over the absorption coefficient range from 10 to 10(6) cm(-1) by using the luminescence excitation and optical transmission spectra at 15 K. The obtained spectra show that the extended states of the bulk a-Si : H exhibit an energy shift due to the quantum confinement in the a-Si : H well layer while the localized band tail states exhibit no significant energy shift. (C) 1997 Elsevier Science Ltd.

引用

页码：119 / 123

页数：5

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