Morphology of epitaxial TiN(001) grown by magnetron sputtering

被引：76

作者：

Karr, BW ^{[1
]}

Petrov, I ^{[1
]}

Cahill, DG ^{[1
]}

Greene, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650 < T < 750 degrees C using reactive magnetron sputter deposition in pure N-2. The surface morphology is dominated by growth mounds with an aspect ratio of similar or equal to 0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t(alpha), with (alpha = 0.25 +/- 0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. (C) 1997 American Institute of Physics.

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页码：1703 / 1705

页数：3

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