Relaxation of photoinjected spins during drift transport in GaAs

被引：57

作者：

Sanada, H

Arata, I

Ohno, Y

Chen, Z

Kayanuma, K

Oka, Y

Matsukura, F

Ohno, H

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1512818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 mum is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed. (C) 2002 American Institute of Physics.

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页码：2788 / 2790

页数：3

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