Effects of Ti thickness on epitaxial CoSi2 growth from Co/Ti bilayer

被引：6

作者：

Kim, JR ^{[1
]}

Bae, KS ^{[1
]}

Cho, YS ^{[1
]}

机构：

[1] HYUNDAI ELECT,QA DIV,ICHUN 467800,KYUNGGI DO,SOUTH KOREA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1997年 / 16卷 / 06期

关键词：

SI; FILMS; LAYER; (100)SI; SYSTEM;

D O I：

10.1023/A:1018516410840

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：473 / 475

页数：3

共 12 条

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[2]

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[10] EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM [J].

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