Growth and morphology of SnPc films on the S-GaAs(001) surface: a combined XPS, AFM and NEXAFS study

被引:33
作者
Vearey-Roberts, AR
Steiner, HJ
Evans, S
Cerrillo, I
Mendez, J
Cabailh, G
O'Brien, S
Wells, JW
McGovern, IT
Evans, DA [1 ]
机构
[1] Univ Wales, Inst Math & Phys Sci, Aberystwyth SY23 3BZ, Dyfed, Wales
[2] Inst Ciencia Mat, E-28006 Madrid, Spain
[3] Trinity Coll Dublin, Dept Phys, Dublin 2, Ireland
关键词
growth; morphology; SnPc films;
D O I
10.1016/j.apsusc.2004.05.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology and molecular ordering of the organic semiconductor tin phthalocyanine (SnPc) on the sulphur-terminated GaAs(001) surface have been monitored by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and near-edge X-ray absorption fine structure (NEXAFS). XPS measurements using synchrotron radiation reveal weak interfacial bonding between the organic molecules and the inorganic semiconductor substrate. The attenuation of XPS core-level peak intensities with increasing organic film thickness suggests a Stranski-Krastanov growth mode, and an island morphology is confirmed by AFM. Although the SnPc clusters do not have specific crystalline facets, NEXAFS spectra show an angle dependence consistent with a molecular orientation close to the surface plane, within the clusters. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:131 / 137
页数:7
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