Energy transfer in the photoexcitation of Sm3+-implanted TiO2 thin films

被引:43
作者
Lange, S [1 ]
Sildos, I [1 ]
Kiisk, V [1 ]
Aarik, J [1 ]
机构
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 112卷 / 01期
关键词
titanium dioxide; rare-earths; photoluminescence;
D O I
10.1016/j.mseb.2004.06.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality nanocrystalline TiO2 thin films of anatase phase were prepared by using the atomic layer deposition technique and implanted with Sm3+ ions. After the annealing of the films a band-to-band optical excitation of TiO2 at low temperatures led to a broadband excitonic emission superposed by a Sm3+-specific emission series of a well-pronounced fine structure. At higher temperatures (>250 K) only the Sm3+ emission dominates. The fine structure of Sm3+ ions indicates that the Sm3+ ions occupy regular sites in the host material. The direct and indirect (retarded) channels of formation of the excitonic states were concluded from the decay kinetics of the emission spectra of Sm3+-doped TiO2. The energy transfer from the host matrix to. the Sm3+ ions is demonstrated and the participation of bound excitonic states in the energy transfer process discussed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:87 / 90
页数:4
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