Silicon carbide nanorods and ceramics from wood

Japanese cedar carbonized at 700degreesC was vacuum infiltrated with tetraethylorthosilicate (TEOS), and heated for 30 min at 1400, 1600 and 1800degreesC by electric pulse heating. The microstructure was investigated by X-ray diffraction and electron microscopy. Extra peaks in the XRD scans could be traced back to beta-SiC. Preliminary Auger analysis indicated an increase of the Si signal in pore walls. This was considered together with SEM images in agreement with the concept of a reaction layer covering the pore walls. Moreover, a large number of nanorods were present inside the pores. TEM analysis confirmed them to be SiC nanorods grown along the <111> direction.