Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films

被引:69
作者
Bason, Y [1 ]
Klein, L
Yau, JB
Hong, X
Ahn, CH
机构
[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
关键词
D O I
10.1063/1.1695197
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transverse resistivity in thin films of La0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below T-C. We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices. (C) 2004 American Institute of Physics.
引用
收藏
页码:2593 / 2595
页数:3
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