Potentiostatic deposition and characterization of Cu2O thin films

被引：42

作者：

Mahalingam, T ^{[1
]}

Chitra, JSP

Rajendran, S

Sebastian, PJ

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Univ Nacl Autonoma Mexico, Energy Res Ctr, Solar Hydrogen Fuel Cell Grp, Temixco 62580, Morelos, Mexico

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 06期

关键词：

D O I：

10.1088/0268-1242/17/6/311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting Cu2O thin films were electrodeposited potentiostatically on Cu and SnO2, substrates. The deposition kinetics of film growth and the conditions to obtain spotty and uniform Cu2O films are studied. X-ray diffraction studies revealed the formation of single phase cubic Cu2O films. The effects of deposition potential, solution pH and bath temperature on the structure are studied. The optical, electrical, composition and morphological analysis are carried out for Cu2O films prepared at various deposition conditions and the results are discussed.

引用

页码：565 / 569

页数：5

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