Core level spectroscopy and RHEED analysis of KGd0.95Nd0.05(WO4)2 surface

被引：55

作者：

Atuchin, V. V. ^{[1
]}

Kesler, V. G.

Maklakova, N. Yu.

Pokrovsky, L. D.

Sheglov, D. V.

机构：

[1] Russian Acad Sci, Inst Semicond Phys, SB, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Inst Semicond Phys, SB, Ctr Tech, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Geol & Mineral, SB, Innovat Dept, Novosibirsk 630090, Russia

[4] Russian Acad Sci, Inst Semicond Phys, SB, Lab Electron Microscopy & Submicron Struct, Novosibirsk 630090, Russia

来源：

EUROPEAN PHYSICAL JOURNAL B | 2006年 / 51卷 / 02期

关键词：

D O I：

10.1140/epjb/e2006-00208-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of the surface structure and electronic properties of (010) KGd0.95Nd0.05(WO4)(2) (Nd:KGW) using RHEED analysis and XPS is presented. It is shown that Nd doping has a negligible effect on the core levels of the basic elements. A bombardment of the Nd:KGW crystal with 3-keV Ar ions results in surface amorphization accompanied by the generation of tungsten ions in lower valence states.

引用

页码：293 / 300

页数：8

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