Study of semiconductor electro-optic modulators for sensing extremely-low-frequency electrical signals

被引：10

作者：

Sasaki, Ai-ichiro ^{[1
]}

Furuya, Akinori ^{[1
]}

Shinagawa, Mitsuru ^{[1
]}

机构：

[1] NTT Corp, NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2009年 / 151卷 / 01期

关键词：

Electro-optic modulator; Photoconduction effect; Schottky effect; Polarization; Isolation; Electrocardiogram; ABSORPTION EDGE;

D O I：

10.1016/j.sna.2009.02.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the characteristics of electro-optic modulators composed of ZnTe and CdTe. Their modulation depths below 100 kHz depend both on wavelength and input light power. The characteristics are explained by considering both the photoconduction effect and the Schottky effect. To keep the modulation depth constant below 100 kHz, the wavelength of the light should be long enough to suppress the photoconcluction effect. Using the ZnTe electro-optic modulator, we developed a sensitive voltage sensor that has constant sensitivity from DC to 30 MHz. Clear electrocardiograms can be obtained with the sensor. (C) 2009 Elsevier B.V. All rights reserved,

引用

页码：1 / 8

页数：8

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