Fabrication of optical wave-guides in silica-on-silicon by nickel electroplating and conventional reactive ion etching

被引:6
作者
Massimi, A
Di Fabrizio, E
Gentili, M
Piccinin, D
Martinelli, M
机构
[1] CoreCom, I-20131 Milan, Italy
[2] CNR, Ist Elettr Stato Solido, I-00156 Rome, Italy
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 10期
关键词
electron beam lithography; reactive ion etching; optical waveguides; integrated optics;
D O I
10.1143/JJAP.38.6150
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel process for the fabrication of deep optical waveguides in silica-on-silicon for optical processing applications has been developed. It makes use of nickel electroplating to conform precisely e-beam written smooth curved structures and to use the deposited nickel to etch deeply (up to 8 mu m) into silica layers. It is demonstrated that nickel plating offers substantial advantages in terms of resistance and resist mold fidelity than more conventional etch masks such as patterned metal layers. Thr etching process, that is based on conventional fluorine reactive ion etching, has been optimized by making use of a design of experiment technique, details of process optimization and comparative analysis of different etching mask performances are also given.
引用
收藏
页码:6150 / 6153
页数:4
相关论文
共 14 条
[1]   Effect of reactive ion etching-generated sidewall roughness on propagation loss of buried-channel silica waveguides [J].
Bazylenko, MV ;
Gross, M ;
Faith, M .
APPLIED PHYSICS LETTERS, 1996, 69 (15) :2178-2180
[2]  
BURKE RR, 1988, SOLID STATE TECHNOL, V31, P67
[3]   QUARTZ ETCHING FOR PHASE-SHIFTING MASKS [J].
DAHM, G ;
RANGELOW, IW ;
HUDEK, P ;
KOOPS, HWP .
MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) :263-266
[4]  
DiFabrizio E, 1997, JPN J APPL PHYS 2, V36, pL70, DOI 10.1143/JJAP.36.L70
[5]   Control in sub-100 nm lithography in SAL-601 [J].
Dobisz, EA ;
Marrian, CRK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2327-2331
[6]   CHF3-REACTIVE ION ETCHING FOR WAVE-GUIDES [J].
DOMINGUEZ, C ;
MUNOZ, J ;
GONZALEZ, R ;
TUDANCA, M .
SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :779-783
[7]   Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist [J].
Gentili, M ;
Gerardino, A ;
Di Fabrizio, E .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (08) :4632-4635
[8]  
GENTILI M, 1994, NATO ADV SCI INST SE, V264, P129
[9]   OPTICAL INTERCONNECTIONS FOR VLSI SYSTEMS [J].
GOODMAN, JW ;
LEONBERGER, FJ ;
KUNG, SY ;
ATHALE, RA .
PROCEEDINGS OF THE IEEE, 1984, 72 (07) :850-866
[10]  
Herriott D. R., 1980, ELECTRON BEAM TECHNO, P141