Surface oxidation activates indium tin oxide for hole injection

被引：276

作者：

Milliron, DJ

Hill, IG

Shen, C

Kahn, A ^{[1
]}

Schwartz, J

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 01期

关键词：

D O I：

10.1063/1.371901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by similar to 0.5 eV. This change correlates with the measured increase in injected current in simple "hole-only" organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O-. units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results. (C) 2000 American Institute of Physics. [S0021-8979(00)02501-9].

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收藏

页码：572 / 576

页数：5

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