Practical next generation solution for stand-alone and embedded DRAM capacitor

For the first time, MIS capacitor with HfO2-Al2O3 laminate is successfully demonstrated. The effective oxide thickness (EOT) of 21Angstrom with acceptable low leakage current has been achieved at cylinder-type MIS capacitor. The EOT of 21Angstrom is the smallest value reported for MIS capacitor with TiN electrode regardless of dielectric material. We have confirmed the feasibility of reducing EOT in spite of simple process without pre-deposition treatment. HfO2-Al2O3 laminate is also useful for SIS capacitor and can satisfy the needs of MIM capacitor for the next generation without changing electrode material. Therefore, this technology is not far away from present but a practical approach adequate for chip-making industry.