Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3-PbTiO3

被引:91
作者
Chen, Jun [1 ]
Tan, Xiaoli [2 ]
Jo, Wook [1 ]
Roedel, Juergen [1 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
[2] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
关键词
bismuth compounds; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric switching; ferroelectric transitions; lead compounds; piezoelectric materials; space groups; X-ray diffraction; MORPHOTROPIC PHASE-BOUNDARY; CERAMICS; SYSTEM; STRAIN; PZT;
D O I
10.1063/1.3191666
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of both polarization and electric-field induced strain was investigated for (1-x)Bi(Mg1/2Ti1/2)O-3-xPbTiO(3) (x=0.36, 0.37, and 0.38), with the morphotropic phase boundary located at x=0.37. Remanent polarization (P-r) and maximum polarization (P-max) of all compositions are enhanced with increasing temperature up to 175 degrees C, which is rationalized as improved domain switching due to reduced tetragonality (c/a). The hysteresis during unipolar electric cycling tends to decrease with increase in the fraction of tetragonal phase. Temperature dependent x-ray diffraction demonstrates that switched non-180 degrees domains are stable against thermal depoling above 200 degrees C, which indicates that the currently investigated materials are suitable for high temperature applications. This promising high-T-C piezoelectric is further discussed with reference to oxygen octahedron of the tilted R3c and untilted R3m space groups and the tolerance factor (t).
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页数:7
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