Polythienylenevinylene as promoter of hole injection from ITO into bilayer light emitting diodes

被引：13

作者：

Tak, YH

Mang, S

Greiner, A

Bassler, H

Pfeiffer, S

Horhold, HH

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS CHEM,D-35032 MARBURG,GERMANY

[2] UNIV MARBURG,ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY

[3] UNIV JENA,INST ORGAN CHEM & MAKROMOL CHEM,D-07743 JENA,GERMANY

来源：

ACTA POLYMERICA | 1997年 / 48卷 / 10期

关键词：

D O I：

10.1002/actp.1997.010481006

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Due to the low oxidation potential of poly-(2,5-thienylenevinylene) (PTV) an ohmic contact for hole injection is established at an indium tin oxide (ITO)/PTV interface. It gives rise to space-charge-limited conduction in an ITO/PTV/Al diode. The ohmic nature of the ITO/PTV contact can be exploited to increase hole injection into multilayer organic light emitting diodes in which internal charge accumulation would otherwise lower majority carrier injection by virtue of electric field screening at the anode.

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页码：450 / 454

页数：5

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