Method of determining the exciton diffusion length using optical interference effect in Schottky diode

被引:34
作者
Banerjee, Suman [1 ,2 ]
Parhi, Anukul Prasad [1 ,2 ]
Iyer, S. Sundar Kumar [2 ,3 ]
Kumar, Satyendra [1 ,2 ]
机构
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, India
[3] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
关键词
diffusion; excitons; indium compounds; light interference; organic semiconductors; photoconductivity; Schottky diodes; semiconductor device models; silver; ORGANIC SOLAR-CELLS; THIN-FILMS; CONSTANTS; SPECTRA;
D O I
10.1063/1.3142869
中图分类号
O59 [应用物理学];
学科分类号
摘要
A general model of calculating the short circuit photocurrent and exciton diffusion length from Schottky diode is given here using optical interference method. This method of estimating the exciton diffusion length can be very useful for those materials that do not give photoluminescence. It also serves as an accurate and simple method to determine the exciton diffusion length, which is an important material property to design devices such as organic solar cells. Our model is verified with the spectral response of indium tin oxide (ITO)/copper phthalocyanine (CuPc)/Al and ITO/CuPc/Ag Schottky diodes.
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页数:3
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