Effects of surface treatments of 6H-SiC upon metal-SiC interfaces

被引：2

作者：

Abe, K ^{[1
]}

Sumitomo, M ^{[1
]}

Sumi, T ^{[1
]}

Eryu, O ^{[1
]}

Nakashima, K ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

AES; aluminum; CAICISS; contamination; ohmic contacts; surface treatment; XPS;

D O I：

10.4028/www.scientific.net/MSF.389-393.909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel surface treatment was investigated in this study Dipping 6H-SiC samples in boiling HF solution was performed to obtain clean and ordered surfaces. The surfaces of the samples prepared by dipping in boding HF and HF at room temperature were investigated by using Auger electron spectroscopy (AES), Coaxial impact-collision ion scattering spectroscopy (CAICISS), and X-ray photoelectron spectroscopy (XPS). From these surface analyses, it was found that the boding HF treatment remove contamination composed of carbon and oxygen. The Effects of the boiling HF treatment on Current- Voltage characteristics of Al contacts are discussed.

引用

页码：909 / 912

页数：4

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