Characterisation of ZrO2 films prepared by rf reactive sputtering at different O2 concentrations in the sputtering gases

被引：90

作者：

Gao, PT ^{[1
]}

Meng, LJ

dos Santos, MP

Teixeira, V

Andritschky, M

机构：

[1] Univ Minho, Dept Fis, P-4710 Braga, Portugal

[2] Inst Super Engn Porto, Dept Fis, P-4200 Oporto, Portugal

来源：

VACUUM | 2000年 / 56卷 / 02期

关键词：

D O I：

10.1016/S0042-207X(99)00199-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zirconium oxide (ZrO2) films have been prepared by rf reactive magnetron sputtering at different O-2 concentrations in the mixture sputtering gases. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and optical spectroscopies. The influence of O-2 concentration in the sputtering gases on the microstructure, residual stress and optical properties of the films has been studied. Also, the effect of loose packing structure caused by the high O-2 gas concentration on the deposition rate has been discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：143 / 148

页数：6

共 17 条

[1] RESIDUAL-STRESS IN PROTECTIVE ZRO2 COATINGS PRODUCED BY MAGNETRON SPUTTERING [J].