Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications

被引：7

作者：

Chen, YC

Lai, R

Wang, H

Yen, HC

Streit, D

Dia, RM

Jones, W

Block, T

Liu, PH

Huang, TW

Chou, YC

Stamper, K

机构：

来源：

1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/ICIPRM.1997.600214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have optimized the gate recess etch process for our W-band high power 0.15 mu m gate length InGaAs/InAlAs/InP HEMT's. A 640 mu m single-stage MMIC amplifier built on this device demonstrated an output power of 130 mW with 13% power added efficiency at 94 GHz. This results represent the best output power fixture data to date measured from a single InP-based HEMT MMIC at this frequency.

引用

页码：509 / 512

页数：4