Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFET's

被引：17

作者：

Abe, Y ^{[1
]}

Oishi, T ^{[1
]}

Shiozawa, K ^{[1
]}

Tokuda, Y ^{[1
]}

Satoh, S ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Itami, Hyogo 6648641, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 12期

关键词：

buried channel; gate depletion; metal gate; MOSFET;

D O I：

10.1109/55.806111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional (2-D) process and device simulation is used to make investigation into the effectiveness of the depletion-free metal gate for a sub-quarter-micron MOSFET as compared with surface channel polysilicon gate MOSFET's which greatly suffer from the gate depletion effect. The results reveal that the subthreshold characteristic for the metal gate NMOSFET is considerably degraded since the depletion-free merit is covered up by an undesirable influence of the buried channel structure, which is indispensable to obtain an appropriate threshold voltage for the midgap gate. Consequently, the drivability of the metal gate MOSFET is comparable to that of the heavily doped polysilicon gate MOSFET under commonly used conditions, and further the metal gate structure is of disadvantage against the reduction of the supply voltage.

引用

页码：632 / 634

页数：3

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