High temperature electronics using SiC: Actual situation and unsolved problems

被引：63

作者：

Chelnokov, VE ^{[1
]}

Syrkin, AL ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

wide bandgap; p-n junction; silicon carbide;

D O I：

10.1016/S0921-5107(96)01990-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high temperature applications of SiC based devices have been considered for a long time. On the other hand, the recent progress in the epitaxial and bulk growth of silicon carbide have made possible the realization of a large variety of devices intended for specific applications. However, the full achievement of high temperature capabilities of SiC will not be only determined by the development of the material itself (purification, structural perfectness etc.) but also by the development of related device elements such as ohmic contacts, insulating layers, interconnections, encapsulation techniques, etc. This paper reviews two groups of problems which play a key role in the development of a SiC based high temperature electronics: (1) physical problems of the real high temperature properties of SiC. (2) physical and technical problems of the high temperature related electrical parts. (C) 1997 Elsevier Science S.A.

引用

页码：248 / 253

页数：6

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