Etching study of ferroelectric microdomains in LiNbO3 and MgO:LiNbO3

被引:25
作者
Holstein, WL
机构
[1] DuPont Ctrl. Res. and Development, Experimental Station, Wilmington, DE 19880-0356
关键词
D O I
10.1016/S0022-0248(96)00681-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Ferroelectric microdomains in Czochralski-grown congruent LiNbO3 and 5 mol% MgO:LiNbO3 were studied by chemical etching with hydrofluoric acid followed by characterization of the +Z and -Z surfaces with optical microscopy and scanning electron microscopy. Both materials contained reverse-polarized microdomains with domain walls formed by non-polar{<11(2)over bar 0}) surfaces and most likely bounded by (0001) surfaces. The shapes of the microdomains in the (0001) plane for congruent LiNbO3 were always regular hexagons, while those in MgO:LiNbO3 were irregular hexagons with 120 degrees angles. For both materials, dimensions of the microdomains in the (0001) plane averaged about 5 mu m and were as large as 12 mu m in congruent LiNbO3 and 25 mu m in MgO:LiNbO3. The areal density of reverse-polarized microdomains across one 3 inch (7.6 cm) diameter wafer averaged about (5-10)x10(3) cm(-2) within the inner 5 cm diameter of the wafer, corresponding to a volume fraction of reverse-polarized material of about 0.1-0.2%.
引用
收藏
页码:477 / 484
页数:8
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