Spin injection and detection in silicon

被引：121

作者：

Zutic, Igor ^{[1
]}

Fabian, Jaroslav

Erwin, Steven C.

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

[3] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.97.026602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.

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页数：4

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