Coulomb enhancement in InGaAs-GaAs quantum-well lasers

被引：35

作者：

Hsu, CF ^{[1
]}

Zory, PS ^{[1
]}

Wu, CH ^{[1
]}

Emanuel, MA ^{[1
]}

机构：

[1] LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94557

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

Coulomb enhancement; InGaAs quantum-well lasers; many-body effects; optical gain; spontaneous emission; threshold current; wavelength;

D O I：

10.1109/2944.605649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that Coulomb enhancement (CE) has a significant influence on the spectral characteristics of optical gain and spontaneous emission in strained InGaAs quantum wens. CE-modified gain spectra are utilized to make an accurate prediction of the dependence of lasing wavelength on cavity length, Threshold-current predictions using the CE-modified gain-current relation show improved agreement with experiment.

引用

页码：158 / 165

页数：8

共 22 条

[1]

ASADA M, 1993, QUANTUM WELL LASERS, pCH2

[2]

BLOOD P, 1996, SPIE P, V2693, P4444

[3] CARRIER-INDUCED ENERGY SHIFT IN GAAS/ALGAAS MULTIPLE-QUANTUM-WELL LASER-DIODES [J].