Monte Carlo simulations of Meyer-Neldel effect on carrier time-of-flight in a-Si:H

We present Monte Carlo simulations of multiple-trapping transport with Meyer-Neldel effect in a-Si:H assuming exponential band tails. The transit time, t(T), and the dispersion parameters, alpha(1) and alpha(2), before and after the transit time, are extracted from the simulated currents. The simulations show that including the Meyer-Neldel effect improves the agreement of alpha(1) and alpha(2) with experimental data, both at low and high temperatures and fits the time-of-flight drift mobility measurements. Best fits to the data yield T-0=263 K, T-MN=464 K, nu(00)=5X10(9) s(-1) and mu(0)=4 cm(2) V-1 s(-1) for electrons and T-0=409 K, T-MN=809 K, nu(00)=6.5X10(10) s(-1) and mu(0)=0.5 cm(2) V-1 s(-1) for holes. (C) 1997 Elsevier Science B.V.